Manufacturable and rugged 1.2 KV SiC MOSFETs fabricated in high-volume 150mm CMOS fab

Design and manufacturing process for high-voltage SiC MOSFETs have been developed in a 150mm CMOS fab. 1.2KV MOSFETs have been fabricated on this production line running in parallel with CMOS wafers. Typical devices have state-of-the-art performance with specific on-resistance of 4.5milliohm-cm2 and low leakage current up to 175°C junction temperature. The process manufacturability and quality of 150mm SiC wafers have been verified by running multiple lots/wafers with consistent results. Devices are stable under avalanche conditions and have been subjected to long term High Temperature Reverse Bias (HTRB) stress at 175°C with passing results. Quality of gate oxide has been confirmed with excellent charge-to-breakdown (Qbd) distribution with mean values >10C/cm2. Manufacturing rugged 1.2 KV SiC MOSFETs in high-volume 150mm CMOS fab can disrupt cost and reliability barriers of SiC MOSFETs and drive wide spread adoption.