Orientation and size effects on phonon-limited hole mobility in rectangular cross-sectional germanium nanowires

The phonon-limited hole mobility in rectangular cross-sectional [001], [110], [111], and [112]-oriented germanium nanowires was calculated and the hole transport characteristics were compared. The calculation revealed that [110] germanium nanowires with larger height along [001] show high hole mobility and are favorable for p-channel FETs.