Transition of dominant lattice sites of Mg in InN:Mg revealed by Raman scattering

Abstract The behavior of Mg dopants in InN films grown by molecular beam epitaxy was studied by Raman scattering in a wide Mg concentration ([Mg]) range from 1 × 10 16 to 4 × 10 21  cm −3 . Transition of dominant lattice sites of Mg dopants was investigated through a diffusion-collision model based on Mg-related local vibrational modes, which was further confirmed through stress analysis. It was found that Mg i and Mg In -N-In i are the dominant sites of Mg dopants at [Mg]  20  cm −3 , while the complex of Mg In -N-Mg i dominates with further increasing [Mg]. This study provides an insight on the behavior of Mg and would be helpful for achieving effective p-type doping in InN.