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Reliability Improvement of 28nm Gate Last High-k/Metal Gate Device with Oxygen Annealing
Reliability Improvement of 28nm Gate Last High-k/Metal Gate Device with Oxygen Annealing
2011
Y L Yang
Y. P. Huang
P.T. Chen
W.Q. Zhang
C. Y. Cheng
L. K. Chin
C.W. Hsu
Wen-Kuan Yeh
yangyilin
Keywords:
Gate dielectric
Metal gate
High-κ dielectric
Annealing (metallurgy)
Time-dependent gate oxide breakdown
Oxygen
Gate oxide
Electronic engineering
Materials science
oxygen annealing
Optoelectronics
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