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水素終端および酸化Si(100)上Geの固相エピタキシャル成長
水素終端および酸化Si(100)上Geの固相エピタキシャル成長
1994
Yoshiaki Kido
Yuuji Terada
Hajime Kawakami
Toshihiko Fujita
Yasuyuki Nakayama
Tsuneo Yasue
Takanori Koshikawa
kido yosiaki
terada yuuzi
kawakami sou
fuzita tosihiko
nakayama yasuyuki
yasue tuneo
kosikawa takanori
Keywords:
Thin film
Germanium
Annealing (metallurgy)
Epitaxy
Analytical chemistry
Materials science
Molecular physics
ion channeling
electron beam deposition
Optoelectronics
surface structure
Atomic physics
Correction
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