Fast and Thermal Neutron Radiation Effects on GaN PIN Diodes

We studied how irradiation with fast (14 MeV) and thermal ( 2 passivation layer. The crystal quality and optical properties of the GaN PIN diodes were characterized by examining changes in the photoluminescence (PL) and micro-Raman scattering spectra. As the fluence of neutrons increased, the yellow luminescence (YL) intensity increased because of the increase in $\text {V}_{\mathrm {{Ga}}}$ -related defects. Irradiation with fast and thermal neutrons destroyed the lattice integrity and changed the strain state of the devices, which was the main reason for the shift in the $\text {E}_{\mathrm {{2}}}^{\mathrm {{high}}}$ phonon mode.