Improvement of power integrity with sub-RDL STO thin film capacitors for WLP/FO-WLP

This paper demonstrates that our very thin film STO capacitor can be located under re-distribution layer (RDL) of WLP/FO-WLP package and is effective for reduction of the power supply noise of LSIs. Their Shmoo plots show improvement of operable frequency and power supply voltage reduction, as results of the improved power integrity realized by our Sub-RDL STO thin film capacitors.