Switching element, switching element manufacturing method, semiconductor device, and semiconductor device manufacturing method

In order to provide a switching element having excellent operational stability and a high production yield, and a semiconductor device using the switching element, this switching element has: a non-volatile variable resistance element, which has a first electrode, a second electrode, and a non-volatile variable resistance layer that is provided between the first electrode and the second electrode; and a rectifying element, which has the second electrode, a third electrode, and a volatile variable resistance layer that is provided between the second electrode and the third electrode. The switching element also has an insulating material at least on a side surface of the third electrode.