Modelling of GaAsP/InGaAs/GaAs strain-balanced multiple-quantum well solar cells

A design of de GaAsP/InGaAs/GaAs solar cell is presented that allows to model high efficiency devices. The stress, tensile and compressive, are considered in order to compute the electron and hole dispersion relation E(k) in conduction and valence band. Similarly, the optical transitions in quantum well and barriers were evaluated to calculate the quantum internal efficiency and the photocurrent. GaAsP/InGaAs/GaAs solar cell is optimized to reach the maximum performance by means of J-V relation. Our model was used to determine the highest efficiencies for cells containing quantum wells under varying degrees of strain, showing that cells with strained quantum wells achieve high efficiencies.