A 1.4-million-element CCD image sensor

A 2/3" format 1.4 megapixel full-frame CCD image sensor with a cell size of 6.8×6.8μ m, that achieves a quantum efficiency of 50% at 550nm, will be disclosed. Output-amplifier noise is 15rms electrons. Amplifier uses buried channel LDD NMOSFETs. Input-referred sensitivity is 15μV/electron over a 71MHz bandwidth. Device has been fabricated using a two-phase, two-level polysilicon process.