Experimental Demonstration of Operational Z 2 -FET Memory Matrix

In this letter, a functional Z 2 -FET DRAM memory matrix is experimentally demonstrated for the first time. Word-level operation with simultaneous reading and programming accesses is successfully proved. Disturbance is also explored, and the results demonstrate bitline disturbance immunity. Furthermore, the fabricated memory matrix, which includes only one selector per word-line, facilitates the scalability of the memory for increasing array dimensions.