Simple method for monitoring the switching activity in memristive cross-point arrays with line resistance effects

Abstract A simple method for monitoring the switching activity (forming, set, reset events and stuck-at-0/1 faults) in memristive cross-point arrays with line resistance effects is proposed. The method consists in correlating incremental current changes in a four-terminal configuration with the location of the switching cell within the array. The potential drops in the interconnection wires as well as the nonlinearity of the switching elements are considered within this approach. The problem is solved by iterating the Kirchhoff's current law for the coupled word and bit lines with appropriate boundary conditions. The main experimental advantage of the proposed method is that only four SMUs (source-measurement unit) are needed to identify the switching cell. In this way, our method could contribute to foster the system-level reliability analysis of cross-point arrays since additional circuitry for the individual addressing of the switching device is not required.