New insight on TDDB area scaling methodology of non-Poisson systems

Non-Poisson area scaling behavior has long been observed in BEOL (Back End Of Line) and MOL (Middle Of Line) Time-dependent dielectric breakdown (TDDB) reliability tests due to known variations across the wafer. Three different statistical models have been proposed to accurately account for this non-Poisson behavior. In this work, a new methodology for proper area scaling treatment is systematically studied by both experiments and Monte Carlo simulations. A more realistic and robust method is then proposed, for a more accurate reliability projection.