Low Cost Diode as Selector Device for Embedded Phase Change Memory in Advanced FD-SOI Technology

This paper presents a new diode selector for embedded Phase Cahnge Memory (PCM) in advanced FD-SOI technology. It has been developed to achieve a very low cost selector device but still very efficient to meet PCM specifications. This new device takes advantages of CMOS in FD-SOI: buried oxide (BOX), shallow trench isolation (STI) and high k metal gates allow very low leakages between cells, thus offering great potential for designing embedded memory arrays of up to several Mbit. The selector can drive 300µA at 2V through the memory cell with 2.5V applied on gates together with a limited leakage current of less than 10pA/cell. The effective cell area of under 0.025µm² is very competitive as compared to a MOS selector, offering a size reduction of around 60% for the same drinving current. Therefore, the new diode on FD-SOI devices is a great solution for a PCM selector due to its low cost and high density.