Photoelectric and electrophysical characteristics of In/sub 2/S/sub 3/-SiO /SUB x/ -Si structures

This paper presents results of the investigation of the effect of two oxidation methods of silicon (chemical and anodic) on the electrophysical properties of In/sub 2/S/sub 3/-SiO /SUB x/ -Si structures. The study of these properties are of interest because of their possible use in the development of photoconverters. It is shown that the change in the potential barrier height in silicon and the properties of the interface depend on the oxidation method. In the development of solar energy photoconverters, preference should be given to structures on n-type silicon with chemical oxide.