The semiconductor device bonding wire and manufacturing method thereof

The present invention, in order to simultaneously suppress adverse inclination and spring failure, a semiconductor device with a bonding wire, characterized in that (1) comprising the line center, and cross-section (line center of the section) to the line longitudinal direction parallel, there is no the major axis a and minor axis b of the ratio a / b is 10 or more and an area of ​​not less than 15μm2 grains (fibrous structure); the results of the crystal orientation of a line in the longitudinal direction (2) measurement of the line center section with respect to the said length direction angle difference of crystal orientation of 15 ° or less in is present in a ratio to an area ratio in terms of 50% or more and 90% or less; the results of the crystal orientation of a line in the longitudinal direction (3) measurement of wire surface, relative to the length direction angle difference of crystal orientation of 15 ° or less in is present in a ratio to an area ratio in terms of 50% or more and 90% or less. At least one secondary area reduction of not less than 15.5% of the wire drawing, final heat treatment temperature and ultimately the final heat treatment temperature of the latest that the heat treatment is set to a predetermined range from before the heat treatment in the drawing process.