Thermodynamic analysis of SiO2 thickness's effect on TSV

Through Silicon Via (TSV), a multi-layer structure of Cu/Ta/SiO2/Si, is one of the most important structure in three dimension integrated circuits (3D ICs). Because of the great difference of coefficient thermal expansions (CTEs) between different meterails, TSV has a higher level of thermal stress that may lead to serious thermal-mechanical problems. Here, a thermodynamic analysis is carried out using finite element method to determine the effects of thickness of SiO 2 layer on the distribution of thermal stress. COMSOL, a finite element software, is used to realize the modelling. Through simulation and analysis, it is clarifed that the maximum stress appears at SiO2 layer. With the increase of the SiO 2 layer thickness, the stress increses synchronously. And the area that has heigher stress expands in the meanwhile. This research provides a way for thermodynamic analysis using finite element method, which can determine the regular of stress distribution with a spcified SiO 2 layer thickness.