InAlN/AlN/GaN HEMT器件特性研究

InAlN/AlN/GaN heterostructure grown by MOCVD on sapphire substrate was fabricated with a high 2-dimensional electron gas (2DEG) density of 1.65×10^13 cm^(-2).The devices with a gate length of 0.15 μm were fabricated on the InAlN/AlN/GaN heterostructure. A maximum drain current density of 1.3 A/mm, a peak extrinsic transconductance of 260 mS/mm were obtained through DC measurement. For their microwave characteristics, a current gain cut-off frequency (ƒ(subscript T)) of 65 GHz and a maximum oscillation frequency(ƒ(subscript max)) of 85 GHz were measured. Compared to conventional AlGaN/AlN/GaN HEMTs, the DC and RF performance of InAlN/AlN/GaN HEMTs are improved greatly due to the high 2DEG density and thin barrier layer.