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Investigation and Mathematical Modelling for Different Scattering Mechanisms in AlGaN/GaN HEMT
Investigation and Mathematical Modelling for Different Scattering Mechanisms in AlGaN/GaN HEMT
2019
M. S. Islam
Sujjatul Islam
Hasan Ahmed
Abdul Ahad
Keywords:
Optoelectronics
High-electron-mobility transistor
Scattering
Materials science
algan gan
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