Modelling of GaN HEMTs: From Device-Level Simulation to Virtual Prototyping

We describe an approach to modelling of power GaN HEMTs, aimed at full-system optimization through concurrent simulation of device, package, and application. We believe this “virtual prototyping” approach is an effective means to link fundamental understanding of the device properties to circuit- and system-level performance. Results are specifically presented from detailed simulations and comparison with experiments for both normally-on insulated-gate GaN HEMTs and normally-off pGaN devices in real switching applications.