Investigation of the energy band diagram of the anodic oxide‐indium antimonide system by internal photoemission

Measurements are made of spectral characteristics of photoemission currents in the anodic oxideindium antimonide system taking into account the charge state of the oxide traps. From the analysis of the curves obtained the values of the energy barrier semiconductor valence band-oxide conduction band and semiconductor conduction bands-oxide valence band are determined. They are 1.25 and 1.6 eV to an accuracy of 0.01 eV, respectively, including the spread between the samples. [Russian Text Ignored]