Investigation of Sensitivity of Extreme Ultraviolet Resists to Out-of-Band Radiation
2008
A method to evaluate the sensitivity of photoresists used for extreme ultraviolet (EUV) lithography has been developed.
EUV sources produce out-of-band radiation and the reflective optics used in EUV tools reflect some of this out-of-band
light on the wafer plane. The effect of exposing these photoresists to this unwanted light can reduce the image contrast
on the wafer, and thereby reduce the image quality of the printed images. To examine the wavelengths of light that may
have an adverse effect on these resists, a deuterium light source mounted with a monochromator has been designed to
determine how sensitive these photoresists are to light at selected wavelengths in the range 190-650 nm.
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