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Measurement and Modeling of Single Electron tunneling to Interface States in SiO^2 and HfO^2 Detected by Electrostatic Force
Measurement and Modeling of Single Electron tunneling to Interface States in SiO^2 and HfO^2 Detected by Electrostatic Force
2004
Ezra Bussmann
Dong Jun Kim
Bob Armstrong
Clayton C Williams
Keywords:
single electron tunneling
Molecular physics
Materials science
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