Old Web
English
Sign In
Acemap
>
Paper
>
Simulation of device-structure dependence of surface-related kink phenomena in GaAs FETs
Simulation of device-structure dependence of surface-related kink phenomena in GaAs FETs
2003
A. Wakabayashi
Y. Kazami
J. Ozawa
Y. Mitani
Kazushige Horio
Keywords:
Impact ionization
Atomic physics
Materials science
Electronic engineering
Condensed matter physics
structure dependence
Correction
Source
Cite
Save
Machine Reading By IdeaReader
0
References
0
Citations
NaN
KQI
[]