Evidence of double layer quantum dot formation in a silicon-on-insulator nanowire transistor

We report the observation of a unique example of double-dot transport in a silicon-on-insulator nanowire transistor. The transport at low temperature showed typical characteristics of two parallel quantum dots, and anomalous secondary minima were also observed in the dID∕dVDS spectrum. Our transport data, including these secondary minima, were consistent with two parallel quantum dots, each formed at the front and at the back interface.