Beam scanning system for the uniformity of implanted doses in a large area

Abstract In order to improve the uniformity of the deposit dose (MeV) ion-irradiated samples, a specific ion beam system has been developed. This system allows us to irradiate samples with different types of scanning (Lissajous, raster scan, circular raster scan) at different sweeping frequencies. This set-up permits to obtain irradiations with a dose variation less than 1.5% over the sample with a diameter up to 10 cm. The system is presently devoted to lifetime control in semiconductors.