Pellicle film, pellicle frame, pellicle, method for producing same, original plate for light exposure, light exposure apparatus and method for manufacturing semiconductor device

Provided are: a pellicle film which has higher EUV transmittance; a pellicle frame; and a pellicle. Also provided are: an original plate for light exposure, which uses this pellicle film, pellicle frame or pellicle and enables the achievement of EUV lithography with high accuracy; and a method for manufacturing a semiconductor device. A pellicle film for light exposure, which is fitted to a support frame so as to stretch out over the opening of the support frame, and which has a thickness of 200 nm or less, while containing a carbon nanotube sheet. The carbon nanotube sheet is provided with bundles, each of which is formed of a plurality of carbon nanotubes and has a diameter of 100 nm or less. The bundles are in-plane oriented in the carbon nanotube sheet.