Mobility enhancement of p‐type SnO2 by In–Ga co‐doping

In this study, transparent p-type indium-gallium (In-Ga) co-doped Sn0 2 thin films were successfully prepared by spray pyrolysis. The first-principles calculations were performed to determine the optimum In/Ga doping ratio. The crystal structures, electrical, and optical properties of In-Ga co-doped SnO 2 were investigated. X-ray diffractometer analysis showed that In-Ga co-doping can effectively decrease Sn0 2 lattice distortion compared to In-doped and Ga-doped SnO 2 . The results of Hall effect measurement suggested that the annealing temperature have an strong influence on the electrical properties of p-type Sn0 2 . The optimum temperature was 500 °C with carrier concentration of 9.5 x 10 17 cm -3 . Hall mobility of 39.2 cm 2 V -1 s -1 . The transmittance of the film is about 70% in the visible range.