High performance InP mHEMTs on GaAs substrate with multiple interconnect layers

We report the development of high performance metamorphic InP high electron mobility transistors (mHEMTs) with InAs composite channel design and three interconnect metal layers suitable for advanced RF and mixed signal integrated circuits. An un-passivated 35nm L g device showed RF figures-of-merit of 533 GHz f τ and 343 GHz f max . After full circuit processing, encapsulated in BCB, a 35nm L g , 2×20um W g mHEMT showed 387GHz f τ , 580GHz f max . Four-inch wafer mapping shows excellent device uniformity and yield. We also report a broadband (206–294GHz) 3-stage G-, H-band common-source amplifier having a nominal S 21 mid-band gain of 11–16dB employing thin-film microstrip wiring.