A method for implementing nor flash bad block management and control circuitry

A method for realizing NOR FLASH bad block management and control circuitry, to a technical field FLASH memory. The control circuit of the present invention comprises a FLASH into the general area, the used area and the replacement area. General area of ​​the system bus and a common area accessible area, the general area is not replaced. Region may be used to replace the bad block of the logical address by the replacement area. Replacement area to replace the backup area common area. The present invention further comprises a control circuit rub rub replacement control unit FLASH Alternatively, the system is used to check and verify a write power error correction on the power unit, a storage unit and a control index FLASH erasable FLASH interface unit timing. Compared with the prior art, when the present invention is configured by FLASH physical partition, for recording and erase bad block substitutions and power correction, to realize the logical address to access the NOR FLASH system, different erase endurance.