Breakdown voltage walkout resulting from hot-carrier-induced interface states in n-type LDMOS transistors
2016
The mechanism of hot-carrier-induced drain breakdown voltage walkout in an n-type lateral diffused MOS transistor is investigated. On the basis of the data of charge pumping measurement, hot-carrier-induced interface states created at the accumulation region is proposed to be responsible for the breakdown walkout. Further technology computer-aided-design simulations also support the before-mentioned mechanism.
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