Casimir force pressure on the insulating layer in metal-insulator-semiconductor structures

The Casimir force pressure on the insulating layer in metal-insulator-semiconductor structures with parameters close to those used in the production of semiconductor devices has been calculated. It has been shown that the Casimir force pressure increases tenfold and reaches several tens of pascals as the insulator thickness decreases from 80 to 40 nm. The metal layer thickness and the presence of the surface layer with a high charge carrier concentration in the semiconductor have a slight effect on calculated values of the Casimir pressure.