Formation mechanisms of embedded wurtzite and zincblende indium nitride nanocrystals

We have examined the formation of InN nanocrystals embedded in InAs. Low temperature (77K) N ion implantation into InAs leads to the formation of an amorphous layer with crystalline InAs remnants. Rapid thermal annealing up to 550 °C leads to the nucleation of zincblende InN nanocrystals with a maximum likelihood radius of 1.3 ± 0.2 nm. Rapid thermal annealing at 600 °C leads to nucleation of zincblende and wurtzite InN, with an increase in maximum likelihood radius to 2.6 ± 0.4 nm. These results are consistent with the predictions of a thermodynamic model for the nanoscale-size-dependence of zincblende and wurtzite InN nucleation.