Design of a resonant-cavity-enhanced p-i-n GaN/Al/sub x/Ga/sub 1-x/N ultraviolet photodetector

Summary form only given The Al/sub x/Ga/sub 1-x/N material system is well suited as a photodetector material in the ultra-violet (UV) spectrum (from 200 to 365 nm). Previously, we have achieved high quantum efficiencies and low dark currents on GaN-based metal-semiconductor-metal photodetectors and p-i-n photodetectors. To attain wavelength selectivity, high quantum efficiency, and high speed, we have applied the resonant cavity concept to Al/sub x/Ga/sub 1-x/N based photodetectors.