Polarization modulation resistive switching in a lead-free ferroelectric Pt/Bi 0.5 Na 0.5 TiO 3 /La 0.67 Sr 0.33 MnO 3 sandwiched heterostructure

High-quality lead-free Bi0.5Na0.5TiO3 (BNT)/La0.67Sr0.33MnO3 (LSMO) bilayer was grown on SrTiO3 crystal by pulsed laser deposition method. Ferroelectric and electrical properties of the Pt/BNT/LSMO heterostructure have been investigated. Interestingly, an asymmetric current–voltage hysteresis exhibits a ferroelectric BNT modulated resistive switching characteristics in BNT/LSMO heterostructure without a forming process. The On/Off ratio of resistance switching behaviors is higher than 103 and retention time is longer than 105 s. The relationship between potential barriers and polarization charges at the Pt/BNT and BNI/LSMO interfaces has been discussed. The Pt/BNT/LSMO cell with both high On/Off ratio and long retention properties exhibits potentials in lead-free nonvolatile memory applications.