Phase change behaviors of Sn-doped Ge–Sb–Te material

Sn-doped Ge–Sb–Te material was prepared by laser synthesis. It has a rocksalt crystal structure for Sn doping content less than 30at.%. A phase change temperature tester was developed to in situ measure crystallization temperature and melting point of Sn-doped Ge–Sb–Te. The crystalliza-tion temperature of Sn-doped Ge–Sb–Te is close to that of Ge2Sb2Te5 while its melting point is much lower than that of Ge2Sb2Te5. The melting points of Sn9.8Ge20.3Sb28.4Te41.5 and Sn18.8Ge19.5Sb25.3Te36.4 are 475 and 450°C, respectively. The crystallization speed was tested by an ultraviolet light at pulse duration of 30ns. It exhibits a high crystallization speed.