Silicon Carbide Technology of MESFET-Based Power Integrated Circuits

This paper presents the start development of a design kit for an innovative technology based on the same lateral topology and the same substrate, which is a dual-gate SiC MESFET. From the electrical characteristic of an initial dual-gate MESFETs, a SPICE model of this device has been established. This model allows developing by simulating a design kit of three devices, which are, respectively, a signal MESFET, a buffer MESFET, and a power MESFET. The signal MESFETs are dedicated to the signal command shaping. The buffer MESFETs would be used as current buffer in the driver circuit for supplying the gate electrode of the power switches. The power MESFETs would be used as power switches. The electrical measurements validate the feasibility of this technology. The characterizations have shown that the technology is operational, and the three devices present the considered electrical behavior. The contact resistance technology must be improved for optimizing the electrical performances. The devices will be used for the design of electronic functions (e.g., ring oscillator and totem pole) in the purpose to consider a full integrated driver in SiC, which could operate in harsh environments.