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Formation of the intermediate semiconductor larger for the Ohmic contact to silicon carbide using Germanium implantation
Formation of the intermediate semiconductor larger for the Ohmic contact to silicon carbide using Germanium implantation
2009
wangyangyuan
Hui Guo
Yuehu Wang
zhangyuming
Dayong Qiao
Yimen Zhang
Keywords:
Germanium
Semiconductor
Materials science
Ohmic contact
Silicon carbide
Optoelectronics
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