SOI wafer-based MEMS structure manufacturing and dicing method

The invention discloses an SOI wafer-based MEMS structure manufacturing and dicing method, which belongs to the field of the micromachining of a micro-electromechanical system and the dicing of a wafer. The method adopts key points that: the high aspect radio effect of ICP corrosion is utilized, and an MEMS structural mask and a mask corresponding to the MEMS structural mask are adopted to perform a conventional MEMS machining process on the front and back surfaces of the SOI wafer; and the machining process comprises glue spreading, photo-etching, corrosion, release and the like to synchronously finish manufacturing an MEMS structure and dicing the wafer. The SOI wafer-based MEMS structure manufacturing and dicing method has the advantages of (1) having no mechanical vibration, no stress damage, no heating, no shavings, no pollution and high rate of finished products, (2) not needing expensive dicing equipment, finishing manufacturing the MEMS structure and dicing the wafer on the basis of conventional MEMS process equipment and having low cost, (3) synchronously finishing the MEMS manufacturing process and the dicing process so as to obtain high efficiency, and (4) not needing to add a temporary or permanent protective layer, not influencing interaction between the equipment and external information, finishing the release at the same time of dicing and not damaging an MEMS movable structure in an intermediate process.