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1.3 kV normally-off β-Ga 2 O 3 vertical transistor with HfO 2 gate-insulator
1.3 kV normally-off β-Ga 2 O 3 vertical transistor with HfO 2 gate-insulator
2021
Daiki Wakimoto
Chia-Hung Lin
Quang Tu Thieu
Hironobu Miyamoto
Kohei Sasaki
Akito Kuramata
Keywords:
gate insulator
Transistor
Optoelectronics
normally off
Gallium oxide
Materials science
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