Strain relaxation in InGaN/GaN multiple-quantum wells by nano-patterned sapphire substrates with smaller period

The growth of InGaN-based light-emitting diodes (LEDs) on dry-etched patterned sapphire substrates (DPSSs) with nano-sized periods can relax the residual compressive strain in InGaN/GaN multiple-quantum wells (MQWs), given that the stronger the light emitted.