The Growth of Si on SiC Complex Substrate by CVD

In this work, the Si layer is deposited on the SiC complex substrate which is composed of Si(111) substrate and 3C-SiC film grown on it. These Si and 3C–SiC films grown under different temperatures in a chemical vapor deposition system are analyzed. The crystalline orientation, the crystalline quality and the conduction type of the films are measured by X-ray diffraction, Raman scattering ,Scanning electron microscope, and 1150 °C is found the optimized temperature for the epitaxial growth of SiC film grown on the carbonized layer. Measurement results also show that the epitaxial layer is n-type 3C-SiC which has the same crystalline orientation with the Si (111) substrate. Si film grown on the SiC complex substrate under the temperature of 690 °C has the best crystalline quality. This film is composed of p-type monocrystal Si and has the same crystalline orientation with the substrate.