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High power performance AlGaN/GaN HEMT with 0.1 μm Y-shaped gate encapsulated with low-κ BCB
High power performance AlGaN/GaN HEMT with 0.1 μm Y-shaped gate encapsulated with low-κ BCB
2016
Xinxin Yu
Jianjun Zhou
Yuechan Kong
Daqing Peng
Weibo Wang
Fangjin Guo
Haiyan Lu
Wen Wang
Cen Kong
Zhonghui Li
Tangsheng Chen
Keywords:
Electronic engineering
Engineering
High-electron-mobility transistor
Optoelectronics
power performance
algan gan
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