Dependence of the band-gap pressure coefficients of self-assembled InAs/GaAs quantum dots on the quantum dot size

We report on low-temperature photoluminescence experiments on self-assembled InAs/GaAs quantum dots under high hydrostatic pressure up to 8 GPa using a diamond anvil cell. The sample exhibits a multimodal size distribution of the quantum dots, which gives rise to a characteristic emission profile displaying up to nine clearly separable peaks attributed to the ground-state recombination from each quantum dot subensemble with different size. Structural analysis revealed that their size differs in entire monolayer steps. The measured pressure coefficients for each subensemble show a linear dependence on their zero-pressure emission energy ranging from 65 meV/GPa for the largest dots to 112 meV/GPa for the smallest ones. Pressure dependent strain simulations based on an atomistic valence-force field yield that the pressure coefficient of the InAs band-gap is strongly reduced when InAs is embedded in a GaAs matrix. Taking into account confinement effects within the envelope function approximation, the calculated pressure coefficients are in good agreement with the experimental findings.