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Bottom Electrode Properties and Electrical Field Cycling Effects on HfOx based Resistive Switching Memory Device
Bottom Electrode Properties and Electrical Field Cycling Effects on HfOx based Resistive Switching Memory Device
2020
Jinghong Li
Young-Hee Kim
Kong Dexin
Kangguo Cheng
Soon-Cheon Seo
C. Robinson
Nicole Saulnier
R. R. Robison
A. J. Varghese
I. Ahsan
R. Muralidhar
Takashi Ando
Vijay Narayanan
Keywords:
Optoelectronics
Materials science
Field cycling
resistive switching memory
Electrode
Correction
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