Semiconductor device with back gate negative capacitor and manufacturing method for semiconductor device
2016
The invention discloses a semiconductor device with a back gate negative capacitor and a manufacturing method for the semiconductor device, and electronic equipment comprising the semiconductor device. According to embodiments, the semiconductor device can comprise a substrate, an active layer arranged on the substrate, a control gate arranged on the active layer and a back gate arranged below the active layer, wherein the back gate comprises negative capacitor.
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