Old Web
English
Sign In
Acemap
>
Paper
>
Variation of dislocation densities in thickness profile of 4H-SiC bulk crystal grown by gas source method
Variation of dislocation densities in thickness profile of 4H-SiC bulk crystal grown by gas source method
2019
Norihiro Hoshino
Isaho Kamata
Yuichiro Tokuda
Takahiro Kanda
Naohiro Sugiyama
Hidekazu Tsuchida
Keywords:
Silicon carbide
Composite material
Materials science
Dislocation
bulk crystal
bulk crystal growth
Correction
Source
Cite
Save
Machine Reading By IdeaReader
0
References
0
Citations
NaN
KQI
[]