The method for manufacturing the silicon carbide epitaxial substrate and a silicon carbide semiconductor device

Silicon epitaxial carbide substrate has a silicon carbide single crystal substrate, and a silicon carbide layer. Silicon carbide single crystal substrate includes a first major surface. Silicon carbide layer is on the first main surface. Silicon carbide layer includes a surface in contact with the silicon carbide single crystal substrate to a second main surface on the opposite side. The average value of the carrier concentration in the silicon carbide layer is 1 × 10 Plane uniformity of the carrier concentration is 2% or less. The second main surface, extends in one direction along the second major surface, and a width in one direction more than twice the width in the direction perpendicular to the one direction, and the maximum depth from the second major surface a groove 80 is Saga 10nm or less, there is a carrot defect. The value obtained by dividing the number by the number of grooves of the carrot defect is 1/500 or less.