Optoelectronic component and process for its preparation

The invention relates to an optoelectronic component comprising a substrate, an anode and a cathode, and at least one between the anode and the cathode arranged active layer. On the cathode side surface of the anode is an amorphous dielectric layer containing a metal oxide, a metal nitride or a metal oxynitride, or consists of, disposed. The metal contained in the metal oxide, metal nitride or metal oxynitride is selected from one or more of the metals of the group consisting of aluminum, gallium, titanium, zirconium, hafnium, tantalum, lanthanum and zinc.