Investigation of gate leakage current mechanism in AlGaN/GaN high-electron-mobility transistors with sputtered TiN

The gate leakage current mechanism of AlGaN/GaN Schottky barrier diodes (SBDs) and high-electron-mobility transistors (HEMTs) with sputtered TiN is systematically investigated. The reverse leakage current (JR) of TiN SBDs increases exponentially with the increase of reverse voltage (VR) from 0 to −3.2 V (Reg. I). This conduction behavior is dominated by Poole-Frenkel emission from TiN through an interface state of 0.53 eV to the conductive dislocation-related continuum states. The obtained interface state of 0.53 eV may be due to the plasma damage to the surface of the AlGaN/GaN HEMT structure during the TiN sputtering. When the TiN SBDs are biased with −20 < VR < −3.2 V, JR saturated due to the depletion of the 2-dimensional electron gas (2DEG) channel (Reg. II). This conduction behavior is dominated by the trap-assisted tunneling through the interface state at ∼0.115 eV above the Fermi level. The three terminal OFF-state gate leakage current of AlGaN/GaN HEMTs exhibited an activation energy of 0.159 eV,...